Infineon OptiMOS Type N-Channel MOSFET, 100 A, 75 V Enhancement, 3-Pin TO-220 IPP100N08S2L07AKSA1
- RS-stocknr.:
- 214-9086
- Fabrikantnummer:
- IPP100N08S2L07AKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 20,27
(excl. BTW)
€ 24,525
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 365 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 4,054 | € 20,27 |
| 50 - 120 | € 3,81 | € 19,05 |
| 125 - 245 | € 3,568 | € 17,84 |
| 250 - 495 | € 3,324 | € 16,62 |
| 500 + | € 3,08 | € 15,40 |
*prijsindicatie
- RS-stocknr.:
- 214-9086
- Fabrikantnummer:
- IPP100N08S2L07AKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-220 | |
| Series | OptiMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 182nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Width | 4.57 mm | |
| Length | 10.36mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-220 | ||
Series OptiMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 182nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Width 4.57 mm | ||
Length 10.36mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
The product is AEC Q101 qualified
It has 175°C operating temperature
100% Avalanche tested
Gerelateerde Links
- Infineon OptiMOS™ N-Channel MOSFET 75 V, 3-Pin TO-220 IPP100N08S2L07AKSA1
- Infineon OptiMOS™ N-Channel MOSFET 75 V, 3-Pin TO-220 IPP80N08S2L07AKSA1
- Infineon OptiMOS™ N-Channel MOSFET BSC010N04LSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 75 V, 3-Pin I2PAK IPI100N08S207AKSA1
- Infineon OptiMOS™ N-Channel MOSFET 75 V, 3-Pin DPAK IPD30N08S2L21ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 3-Pin TO-220 IPP057N06N3GXKSA1
- Infineon OptiMOS™ N-Channel MOSFET 80 V, 3-Pin TO-220 IPP023N08N5AKSA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin TO-220 IPP80N06S209AKSA2