Infineon CoolMOS P6 Type N-Channel MOSFET, 23.8 A, 600 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 214-9092
- Fabrikantnummer:
- IPP60R160P6XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 53,95
(excl. BTW)
€ 65,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 250 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,079 | € 53,95 |
| 100 - 200 | € 0,944 | € 47,20 |
| 250 + | € 0,92 | € 46,00 |
*prijsindicatie
- RS-stocknr.:
- 214-9092
- Fabrikantnummer:
- IPP60R160P6XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS P6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Power Dissipation Pd | 176W | |
| Forward Voltage Vf | 0.9V | |
| Standards/Approvals | No | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS P6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Power Dissipation Pd 176W | ||
Forward Voltage Vf 0.9V | ||
Standards/Approvals No | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Easy to use/drive
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Very high commutation ruggedness
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