Infineon 600V CoolMOS P6 Type N-Channel MOSFET, 23.8 A, 600 V N, 3-Pin TO-220 IPA60R160P6XKSA1
- RS-stocknr.:
- 218-2999
- Fabrikantnummer:
- IPA60R160P6XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 16,85
(excl. BTW)
€ 20,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,37 | € 16,85 |
| 25 - 45 | € 2,828 | € 14,14 |
| 50 - 120 | € 2,662 | € 13,31 |
| 125 - 245 | € 2,46 | € 12,30 |
| 250 + | € 2,29 | € 11,45 |
*prijsindicatie
- RS-stocknr.:
- 218-2999
- Fabrikantnummer:
- IPA60R160P6XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | 600V CoolMOS P6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 176W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series 600V CoolMOS P6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 176W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ N-channel power MOSFET. The CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. The extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
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