Infineon CoolMOS P6 Type N-Channel MOSFET, 22.4 A, 600 V Enhancement, 5-Pin VSON
- RS-stocknr.:
- 214-9073
- Fabrikantnummer:
- IPL60R180P6AUMA1
- Fabrikant:
- Infineon
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 214-9073
- Fabrikantnummer:
- IPL60R180P6AUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P6 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 176W | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P6 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 176W | ||
Length 8.1mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Easy to use/drive
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