Infineon CoolMOS CE Type N-Channel MOSFET, 37 A, 500 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 215-2476
Fabrikantnummer:: IPA60R080P7XKSA1
Fabrikant:: Infineon

Infineon CoolMOS CE Type N-Channel MOSFET, 37 A, 500 V Enhancement, 3-Pin TO-220

Subtotaal (1 tube van 50 eenheden)*

€ 127,20

(excl. BTW)

€ 153,90

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 09 oktober 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 +	€ 2,544	€ 127,20

*prijsindicatie

RS-stocknr.:: 215-2476
Fabrikantnummer:: IPA60R080P7XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	37A
	Maximum Drain Source Voltage Vds	500V
	Series	CoolMOS CE
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	29W
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 37A
	Maximum Drain Source Voltage Vds 500V
	Series CoolMOS CE
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 29W
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA60R080P7XKSA1

Infineon CoolMOS CE Series MOSFET, 500V Drain Source Voltage, 37A Continuous Drain Current - IPA60R080P7XKSA1

This n-channel MOSFET is a high-voltage switching transistor designed for power-conversion and control applications. It operates reliably across a wide temperature range and is supplied in a TO-220 through-hole package suitable for conventional assembly methods. The device is intended for use where robust drain-to-source voltage capability and moderate power dissipation are required.

Features and Benefits:

• 500V drain rating delivers strong high-voltage tolerance for converters
• 80mΩ Rds(on) enables lower conduction losses during load periods
• 37A continuous drain current supports substantial output capability
• 29W maximum dissipation allows sustained power handling in applications
• 51nC typical gate charge provides predictable switching energy demand
• 0.9V forward voltage reduces drop in diode conduction events

Applications

• Suitable for offline switch-mode power supplies
• Ideal for high-voltage DC-DC conversion stages
• Used with industrial motor drive front ends
• Can be used for inrush current limiting circuits
• Suitable for general-purpose power switching in lab rigs

What gate voltage limits must be observed during operation?

The device accepts gate-source voltages up to 20 V

designs should keep gate drive within this range to prevent gate-oxide stress.

How does temperature affect safe use in systems?

The component is rated to operate between -55 °C and 150 °C, so thermal management should ensure junction temperatures remain within this span for reliable service.

Which mounting approach is required for PCB integration?

It is provided in a TO-220 through-hole package, so it is intended for board mounting with mechanical fastening and appropriate heatsinking.

What switching behaviour should designers expect at high voltages?

With a typical gate charge of 51 nC, switching losses scale predictably

driver selection must handle this charge to achieve desired transition speeds.