Infineon CoolMOS CE Type N-Channel MOSFET, 5 A, 600 V Enhancement, 3-Pin IPAK IPU60R1K5CEAKMA2

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RS-stocknr.:
217-2585
Fabrikantnummer:
IPU60R1K5CEAKMA2
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS CE

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

9.4nC

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

49W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Height

2.41mm

Width

6.22 mm

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

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