Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin TO-252

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€ 795,00

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€ 962,50

(incl. BTW)

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  • Verzending vanaf 07 mei 2026
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2500 - 2500€ 0,318€ 795,00
5000 +€ 0,302€ 755,00

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RS-stocknr.:
215-2515
Fabrikantnummer:
IPD80R2K4P7ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

800V

Series

800V CoolMOS P7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.4Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

22W

Typical Gate Charge Qg @ Vgs

7.5nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

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