Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-252

RS-stocknr.:: 215-2517
Fabrikantnummer:: IPD80R900P7ATMA1
Fabrikant:: Infineon

Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-252

Subtotaal (1 rol van 2500 eenheden)*

€ 1.040,00

(excl. BTW)

€ 1.257,50

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Aantal stuks	Per stuk	Per rol*
2500 +	€ 0,416	€ 1.040,00

*prijsindicatie

RS-stocknr.:: 215-2517
Fabrikantnummer:: IPD80R900P7ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-252
	Series	800V CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	900mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Power Dissipation Pd	45W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-252
	Series 800V CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 900mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Power Dissipation Pd 45W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD80R900P7ATMA1

Infineon 800V CoolMOS P7 Series MOSFET, 800V Drain Source Voltage, 6A Continuous Drain Current - IPD80R900P7ATMA1

This MOSFET is a high-voltage switching transistor designed for power conversion and energy-efficient switching in demanding environments. It operates across a wide temperature range and is supplied in a surface-mount package suited to compact board layouts, making it appropriate for industrial and power-electronics applications where robust voltage handling is required.

Features and Benefits:

• 800V drain rating enables high-voltage system switching
• 6A continuous drain current supports moderate load currents
• 900mΩ low on-resistance reduces conduction losses
• 15nC typical gate charge allows faster gate-drive response
• 45W maximum power dissipation handles substantial thermal stress
• Gate-source tolerance up to 20V accommodates common gate-drive voltages

Applications

• Ideal for power supplies in high-voltage converters
• Used for switch-mode power-supply stage switching
• Suitable for industrial inverter front-ends
• Can be used for high-voltage motor-drive circuits
• Used with compact surface-mount assemblies on PCBs

What temperature extremes can it withstand in operation?

It is specified to function between -55°C and 150°C, covering low-temperature and elevated-junction applications.

How is it mounted to a PCB and what package does it use?

It is supplied in a TO-252 package intended for surface-mount assembly to save board area.

What conduction behaviour should I expect under load?

The device exhibits an on-resistance up to 900mΩ, influencing conduction losses and thermal design for continuous currents up to 6A.

What gate-drive requirements are necessary for safe operation?

The gate-source voltage rating is ±20V, and typical total gate charge is 15nC, informing your driver capability and switching energy budget.