Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 5-Pin ThinPAK
- RS-stocknr.:
- 215-2523
- Fabrikantnummer:
- IPL60R285P7AUMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 2.610,00
(excl. BTW)
€ 3.150,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,87 | € 2.610,00 |
*prijsindicatie
- RS-stocknr.:
- 215-2523
- Fabrikantnummer:
- IPL60R285P7AUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS CFD7 | |
| Package Type | ThinPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 285mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 59W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 8.1mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS CFD7 | ||
Package Type ThinPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 285mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 59W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 8.1mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
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