Infineon CoolMOS Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN95R2K0P7ATMA1

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€ 13,26

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€ 16,04

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RS-stocknr.:
215-2534
Fabrikantnummer:
IPN95R2K0P7ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

10nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

7W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 950V Cool MOS™ P7 series designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V Cool MOS™ C3, the 950V Cool MOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V Cool MOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. Cool MOS™ P7 is developed with best-in-class VGS(the) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class FOMRDS(on)*Eoss; reduced Qg, Ciss, and Coss

Best-in-class SOT-223 RDS(on)

Best-in-class Cool MOS™ quality and reliability

Fully optimized portfolio

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