Infineon OptiMOS Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 215-2536
- Fabrikantnummer:
- IPP057N06N3GXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 76,80
(excl. BTW)
€ 92,95
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 350 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,536 | € 76,80 |
| 100 - 200 | € 1,398 | € 69,90 |
| 250 - 450 | € 1,306 | € 65,30 |
| 500 - 1200 | € 1,213 | € 60,65 |
| 1250 + | € 1,152 | € 57,60 |
*prijsindicatie
- RS-stocknr.:
- 215-2536
- Fabrikantnummer:
- IPP057N06N3GXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 115W | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 115W | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Ideal for fast switching applications
RoHS compliant - halogen free
MSL1 rated
Gerelateerde Links
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 3-Pin TO-220 IPP057N06N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin TO-220 IPP052N06L3GXKSA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin TO-220 IPP80N06S407AKSA2
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP052N08N5AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP057N08N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin TO-220 FP IPA057N06N3GXKSA1
- Infineon OptiMOS™ N-Channel MOSFET 80 V, 3-Pin TO-220 IPP023N08N5AKSA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin TO-220 IPP80N06S209AKSA2