Infineon HEXFET N-Channel MOSFET, 48 A, 60 V Enhancement, 3-Pin TO-263 IRFZ44ESTRLPBF
- RS-stocknr.:
- 215-2605
- Fabrikantnummer:
- IRFZ44ESTRLPBF
- Fabrikant:
- Infineon
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 215-2605
- Fabrikantnummer:
- IRFZ44ESTRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Series | HEXFET | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 48 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-263 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.3 V | |
| Maximum Drain Source Resistance (Rds) | 23 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 110 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 60 nC | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Series HEXFET | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 48 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-263 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.3 V | ||
Maximum Drain Source Resistance (Rds) 23 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 110 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 60 nC | ||
The Infineon series fifth generation HEXFET from International rectifier utilize Advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
Advanced Process Technology
Fully avalanche rated
Fast switching
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