Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 644 A, 40 V Enhancement, 8-Pin PDFN56
- RS-stocknr.:
- 216-9647
- Fabrikantnummer:
- TSM025NB04CR
- Fabrikant:
- Taiwan Semiconductor
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We weten niet of dit artikel weer voorradig zal zijn, het wordt door de fabrikant stopgezet.
- RS-stocknr.:
- 216-9647
- Fabrikantnummer:
- TSM025NB04CR
- Fabrikant:
- Taiwan Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 644A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 77nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 107W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Height | 1.1mm | |
| Width | 3.81 mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 644A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 77nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 107W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Height 1.1mm | ||
Width 3.81 mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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