Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 67 A, 80 V Enhancement, 8-Pin PDFN56 TSM089N08LCR
- RS-stocknr.:
- 216-9679
- Fabrikantnummer:
- TSM089N08LCR
- Fabrikant:
- Taiwan Semiconductor
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 36,67
(excl. BTW)
€ 44,37
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Wordt opgeheven
- Laatste 1.640 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 3,667 | € 36,67 |
| 50 - 90 | € 3,594 | € 35,94 |
| 100 - 240 | € 3,304 | € 33,04 |
| 250 - 990 | € 3,238 | € 32,38 |
| 1000 + | € 3,00 | € 30,00 |
*prijsindicatie
- RS-stocknr.:
- 216-9679
- Fabrikantnummer:
- TSM089N08LCR
- Fabrikant:
- Taiwan Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 155°C | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Length | 6mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 155°C | ||
Width 5 mm | ||
Standards/Approvals No | ||
Length 6mm | ||
Height 1mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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