Infineon CoolMOS N-Channel MOSFET, 70 A, 100 V Enhancement, 3-Pin TO-263 IPB70N10S312ATMA1
- RS-stocknr.:
- 217-2508
- Fabrikantnummer:
- IPB70N10S312ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 18,72
(excl. BTW)
€ 22,65
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 610 stuk(s) vanaf 12 oktober 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,872 | € 18,72 |
| 50 - 90 | € 1,778 | € 17,78 |
| 100 - 240 | € 1,704 | € 17,04 |
| 250 - 490 | € 1,629 | € 16,29 |
| 500 + | € 1,516 | € 15,16 |
*prijsindicatie
- RS-stocknr.:
- 217-2508
- Fabrikantnummer:
- IPB70N10S312ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 129W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.57mm | |
| Standards/Approvals | No | |
| Length | 10.31mm | |
| Width | 9.45mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 129W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.57mm | ||
Standards/Approvals No | ||
Length 10.31mm | ||
Width 9.45mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon 100V, N-Ch, 11.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
100% Avalanche tested
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