Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263

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€ 2.336,00

(excl. BTW)

€ 2.827,00

(incl. BTW)

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  • Verzending vanaf 05 mei 2026
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1000 +€ 2,336€ 2.336,00

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RS-stocknr.:
217-2505
Fabrikantnummer:
IPB65R095C7ATMA2
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

95mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

129W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Width

9.45 mm

Length

10.31mm

Standards/Approvals

No

Height

4.57mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines thee experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits off a switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

Increased MOSFET dv/dt ruggedness

Better efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg

Best in class RDS(on)/package

Easy to use/drive

Pb-free plating, halogen free mold compound

Qualified for industrial grade applications according to JEDEC(J-STD20 andJESD22)

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