Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7SAUMA1

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 verpakking van 20 eenheden)*

€ 16,08

(excl. BTW)

€ 19,46

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 3.960 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
20 - 80€ 0,804€ 16,08
100 - 180€ 0,763€ 15,26
200 - 480€ 0,732€ 14,64
500 - 980€ 0,70€ 14,00
1000 +€ 0,651€ 13,02

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
217-2524
Fabrikantnummer:
IPD60R360P7SAUMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

41W

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

9.4nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

6.22 mm

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Distrelec Product Id

304-39-407

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss and R DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Gerelateerde Links