Infineon IPD Type N-Channel MOSFET, 14.7 A, 600 V Enhancement, 3-Pin TO-252

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Subtotaal (1 rol van 2500 eenheden)*

€ 1.167,50

(excl. BTW)

€ 1.412,50

(incl. BTW)

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  • Plus verzending 2.500 stuk(s) vanaf 29 december 2025
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2500 +€ 0,467€ 1.167,50

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RS-stocknr.:
217-2525
Fabrikantnummer:
IPD60R400CEAUMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14.7A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.4nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

41W

Maximum Operating Temperature

150°C

Length

6.73mm

Height

2.41mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

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