Infineon CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-251 IPS70R360P7SAKMA1
- RS-stocknr.:
- 217-2581
- Fabrikantnummer:
- IPS70R360P7SAKMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 20 eenheden)*
€ 20,72
(excl. BTW)
€ 25,08
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 200 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 1,036 | € 20,72 |
| 100 - 180 | € 0,901 | € 18,02 |
| 200 - 480 | € 0,839 | € 16,78 |
| 500 - 980 | € 0,777 | € 15,54 |
| 1000 + | € 0,725 | € 14,50 |
*prijsindicatie
- RS-stocknr.:
- 217-2581
- Fabrikantnummer:
- IPS70R360P7SAKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16.4nC | |
| Maximum Power Dissipation Pd | 53W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.4mm | |
| Standards/Approvals | No | |
| Height | 9.82mm | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16.4nC | ||
Maximum Power Dissipation Pd 53W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 2.4mm | ||
Standards/Approvals No | ||
Height 9.82mm | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss
Excellent thermal behaviour
Integrated ESD protection diode
Low switching losses(Eoss)
Product validation acc. JEDEC Standard
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