Infineon CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-251 IPS70R360P7SAKMA1

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€ 16,74

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Verpakkingsopties
RS-stocknr.:
217-2581
Fabrikantnummer:
IPS70R360P7SAKMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12.5A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS P7

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

53W

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

16.4nC

Maximum Operating Temperature

150°C

Width

2.4 mm

Height

9.82mm

Standards/Approvals

No

Length

6.73mm

Automotive Standard

AEC-Q101

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

Extremely low losses due to very low FOMRDS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses(Eoss)

Product validation acc. JEDEC Standard

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