Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 verpakking van 25 eenheden)*

€ 7,775

(excl. BTW)

€ 9,40

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 1.250 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
25 - 225€ 0,311€ 7,78
250 - 600€ 0,295€ 7,38
625 - 1225€ 0,289€ 7,23
1250 - 2475€ 0,27€ 6,75
2500 +€ 0,218€ 5,45

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
220-7445
Fabrikantnummer:
IPSA70R2K0P7SAKMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

5.7A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS P7

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.8nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

17.6W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.6mm

Height

6.1mm

Width

2.38 mm

Automotive Standard

No

The Infineon Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS P7 is an optimized platform tailored to target cost sensitive application in consumer market such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

Extremely low losses due rcovery low FOMRDS(on)*Qgand RDS(on)*Eoss

Excellent thermal behavior

Integrated ESD protection diode

Low switching losses(Eoss)

Product validationa cc.JEDEC Standard

Cost competitive technology

Lower temperature

High ES Druggedness

Enables efficiency gainsat higher switching frequencies

Enableshighpowerdensitydesignsandsmallformfactors

Gerelateerde Links