Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251

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Subtotaal (1 tube van 75 eenheden)*

€ 18,075

(excl. BTW)

€ 21,90

(incl. BTW)

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  • Plus verzending 1.200 stuk(s) vanaf 29 december 2025
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Aantal stuks
Per stuk
Per tube*
75 +€ 0,241€ 18,08

*prijsindicatie

RS-stocknr.:
220-7444
Fabrikantnummer:
IPSA70R2K0P7SAKMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

5.7A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS P7

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

17.6W

Typical Gate Charge Qg @ Vgs

3.8nC

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Height

6.1mm

Length

6.6mm

Standards/Approvals

No

Width

2.38 mm

Automotive Standard

No

The Infineon Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS P7 is an optimized platform tailored to target cost sensitive application in consumer market such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

Extremely low losses due rcovery low FOMRDS(on)*Qgand RDS(on)*Eoss

Excellent thermal behavior

Integrated ESD protection diode

Low switching losses(Eoss)

Product validationa cc.JEDEC Standard

Cost competitive technology

Lower temperature

High ES Druggedness

Enables efficiency gainsat higher switching frequencies

Enableshighpowerdensitydesignsandsmallformfactors

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