Infineon CoolMOS P7 Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 IPW60R120P7XKSA1

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RS-stocknr.:
217-2587
Fabrikantnummer:
IPW60R120P7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

95W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.13mm

Standards/Approvals

No

Height

41.42mm

Width

5.21 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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