Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 219-6022
- Fabrikantnummer:
- IPW60R045P7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 186,60
(excl. BTW)
€ 225,90
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 330 stuk(s) vanaf 30 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 6,22 | € 186,60 |
| 60 - 120 | € 5,909 | € 177,27 |
| 150 + | € 5,66 | € 169,80 |
*prijsindicatie
- RS-stocknr.:
- 219-6022
- Fabrikantnummer:
- IPW60R045P7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 206A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 201W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 21.1 mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 206A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 201W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 21.1 mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Gerelateerde Links
- Infineon CoolMOS™ P7 Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R045P7XKSA1
- Infineon CoolMOS™ P7 Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPW60R024P7XKSA1
- Infineon CoolMOS™ P7 Dual N-Channel MOSFET Transistor & Diode 650 V, 4-Pin TO-247-4 IPZA60R060P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 650 V, 3-Pin TO-247 IPA60R360P7XKSA1
- Infineon CoolMOS™ CFD7 Dual N-Channel MOSFET 650 V, 3-Pin TO-247 IPA60R280CFD7XKSA1
- Infineon CoolMOS™ Dual N-Channel MOSFET Transistor & Diode 650 V, 3-Pin TO-247 IPW60R090CFD7XKSA1
- Infineon CoolMOS™ Dual N-Channel MOSFET Transistor & Diode 650 V, 3-Pin TO-247 IPW65R110CFDAFKSA1
- Infineon CoolMOS™ P6 Dual N-Channel MOSFET Transistor & Diode 650 V, 3-Pin TO-247 IPW60R099P6XKSA1