Infineon CoolMOS P7 Type N-Channel MOSFET, 386 A, 650 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 219-6018
- Fabrikantnummer:
- IPW60R024P7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 222,18
(excl. BTW)
€ 268,83
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 240 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 7,406 | € 222,18 |
| 60 - 60 | € 7,036 | € 211,08 |
| 90 + | € 6,591 | € 197,73 |
*prijsindicatie
- RS-stocknr.:
- 219-6018
- Fabrikantnummer:
- IPW60R024P7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 386A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P7 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 164nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 291W | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Height | 5.21mm | |
| Width | 21.1 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 386A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P7 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 164nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 291W | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Height 5.21mm | ||
Width 21.1 mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
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