Infineon HEXFET Type N-Channel MOSFET, 59 A, 55 V Enhancement, 3-Pin TO-252 IRFR2905ZTRPBF

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Verpakkingsopties
RS-stocknr.:
217-2620
Fabrikantnummer:
IRFR2905ZTRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

14.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

29nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.22 mm

Length

6.73mm

Height

2.39mm

Automotive Standard

No

Distrelec Product Id

304-39-420

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead Free

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