Infineon HEXFET Type N-Channel MOSFET, 119 A, 40 V TO-252 IRFR4104TRPBF

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RS-stocknr.:
217-2625
Fabrikantnummer:
IRFR4104TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

119A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

5.5mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

89nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

140W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

6.22mm

Length

6.73mm

Width

2.39 mm

Distrelec Product Id

304-39-423

Automotive Standard

No

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance 1

75°C Operating Temperature

Fast Switching R

repetitive Avalanche Allowed up to Tjmax L

ead-Free

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