Infineon HEXFET Type N-Channel MOSFET, 100 A, 40 V TO-252

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Subtotaal (1 rol van 3000 eenheden)*

€ 2.964,00

(excl. BTW)

€ 3.585,00

(incl. BTW)

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  • Verzending vanaf 24 november 2027
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RS-stocknr.:
258-0632
Fabrikantnummer:
AUIRFR8403TRL
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

3.1mΩ

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

66nC

Maximum Power Dissipation Pd

99W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and wide variety of other applications.

Advanced Process Technology

New Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant


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