Infineon OptiMOS N-Channel MOSFET, 46 A, 60 V N, 8-Pin TSDSON BSZ099N06LS5ATMA1

RS-stocknr.:: 218-2986
Fabrikantnummer:: BSZ099N06LS5ATMA1
Fabrikant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 46 A, 60 V N, 8-Pin TSDSON BSZ099N06LS5ATMA1

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€ 11,86

(excl. BTW)

€ 14,36

(incl. BTW)

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Verzending vanaf 18 oktober 2027

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Aantal stuks	Per stuk	Per verpakking*
20 +	€ 0,593	€ 11,86

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RS-stocknr.:: 218-2986
Fabrikantnummer:: BSZ099N06LS5ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	46A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TSDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	9.9mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	6.9nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	36W
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Width	3.4mm
	Standards/Approvals	No
	Length	3.4mm
	Height	1.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 46A
	Maximum Drain Source Voltage Vds 60V
	Package Type TSDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 9.9mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 6.9nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 36W
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Width 3.4mm
	Standards/Approvals No
	Length 3.4mm
	Height 1.1mm
	Automotive Standard No

Datasheet - BSZ099N06LS5ATMA1

Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 46A Maximum Continuous Drain Current - BSZ099N06LS5ATMA1

This MOSFET is a power-switching transistor designed for high-current N-channel applications in Compact surface-mount assemblies, operating across a wide temperature range and providing controlled gate-drive behaviour for fast switching tasks.

Features and Benefits:

• 60 V drain rating enables medium-voltage switching capability
• 46 A continuous drain current supports high-current delivery
• 9.9 mΩ RDS(on) minimises conduction losses at rated current
• 36 W maximum dissipation allows significant power handling
• 6.9 nC typical gate charge reduces switching energy requirements
• 20 V gate tolerance permits robust gate-drive margins

Applications

• Suitable for DC-DC converters in Compact power supplies
• Ideal for high-current synchronous rectification stages
• Used for motor-drive half-bridge switching elements
• Can be used for power management in industrial electronics
• Suitable for surface-mount assemblies requiring small footprints

What package and mounting type does it use?

It is supplied in a TSDSON package designed for surface mounting.

What thermal performance is expected across the operating range?

It operates from −55 °C up to 150 °C, enabling deployment in wide-temperature environments.

How does gate charge affect switching performance?

A typical gate charge of 6.9 nC reduces drive energy and supports Faster transitions.

What gate-source voltage should be observed for safe operation?

The gate-source voltage must not exceed 20 V to avoid device damage.

What is the device channel configuration?

The device uses an N-type channel in enhancement mode for standard MOSFET switching.