Infineon OptiMOS 5 N-Channel MOSFET, 174 A, 150 V N, 7-Pin TO-263 IPB044N15N5ATMA1
- RS-stocknr.:
- 218-3028
- Fabrikantnummer:
- IPB044N15N5ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 2.133,00
(excl. BTW)
€ 2.581,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 10 december 2026
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 2,133 | € 2.133,00 |
*prijsindicatie
- RS-stocknr.:
- 218-3028
- Fabrikantnummer:
- IPB044N15N5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 5 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 5 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS 5 Series MOSFET, 150V Drain Source Voltage, 174A Continuous Drain Current - IPB044N15N5ATMA1
This MOSFET is a power-switching transistor designed for high-current, high-voltage applications where thermal resilience and surface mounting are required. It operates across a wide temperature range and is configured as an N‑channel device in a TO-263 surface-mount package, suitable for integration into converter and inverter topologies.
Features and Benefits:
• Low on-resistance 4.4mΩ reduces conduction losses and heat generation
• High continuous drain current 174A supports heavy-load operation
• Drain-source voltage rating 150V enables high-voltage switching
• Maximum power dissipation 300W allows sustained power handling
• Gate-source voltage limit 20V accommodates standard gate drive levels
• Forward voltage 1.1V minimises drop during conduction at rated currents
• High continuous drain current 174A supports heavy-load operation
• Drain-source voltage rating 150V enables high-voltage switching
• Maximum power dissipation 300W allows sustained power handling
• Gate-source voltage limit 20V accommodates standard gate drive levels
• Forward voltage 1.1V minimises drop during conduction at rated currents
Applications
• Suitable for DC-DC converters in power distribution systems
• Used for inverter stages in motor-drive assemblies
• Ideal for high-current switching in server power supplies
• Can be used for power management in industrial control equipment
• Used with heat-sinking solutions in high-power assemblies
• Used for inverter stages in motor-drive assemblies
• Ideal for high-current switching in server power supplies
• Can be used for power management in industrial control equipment
• Used with heat-sinking solutions in high-power assemblies
What thermal extremes can this device withstand during operation?
It is specified for operation from −55°C up to +175°C, enabling use in environments with severe temperature variation.
What mounting and pin configuration should be expected for PCB layout?
The component is supplied in a TO-263 surface-mount package with seven pins, requiring corresponding land pattern and thermal pad considerations.
Which conduction type and channel mode are implemented internally?
The device uses an N‑channel, enhancement‑mode configuration suitable for low-side or high-side switching with appropriate gate drive.
How does the device perform in terms of power handling for continuous operation?
It has a maximum continuous drain current of 174A and a maximum power dissipation rated at 300W for sustained power applications.
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