Infineon OptiMOS 5 N-Channel MOSFET, 114 A, 150 V N, 3-Pin TO-263 IPB073N15N5ATMA1

RS-stocknr.:: 218-3031
Fabrikantnummer:: IPB073N15N5ATMA1
Fabrikant:: Infineon

Infineon OptiMOS 5 N-Channel MOSFET, 114 A, 150 V N, 3-Pin TO-263 IPB073N15N5ATMA1

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RS-stocknr.:: 218-3031
Fabrikantnummer:: IPB073N15N5ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	114A
	Maximum Drain Source Voltage Vds	150V
	Series	OptiMOS 5
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.3mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	214W
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 114A
	Maximum Drain Source Voltage Vds 150V
	Series OptiMOS 5
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.3mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 214W
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB073N15N5ATMA1

Infineon OptiMOS 5 Series MOSFET, 150V Drain Source Voltage, 114A Continuous Drain Current - IPB073N15N5ATMA1

This MOSFET is a high-power semiconductor device designed for switching and power management in demanding electronic systems. It operates as an N-channel transistor in a surface-mount TO-263 package, intended for applications requiring substantial current delivery and heat handling across a wide temperature range.

Features and Benefits:

• 150 V drain rating for high-voltage switching capability
• 114 A continuous drain current for heavy-load operation
• 7.3 mΩ Rds(on) for reduced conduction losses
• 214 W power dissipation enabling sustained thermal load
• 1.1 V forward voltage yielding efficient conduction behaviour
• 20 V gate tolerance allowing robust gate-drive margins

Applications

• Suitable for DC-DC converters in power supplies
• Ideal for motor-drive stages requiring high current
• Used with power-management modules in industrial systems
• Can be used for synchronous rectification in converters
• Suitable for high-voltage switching in telecommunications equipment

What gate voltage range can I apply safely?

The device accepts up to 20 V between gate and source without exceeding its specified gate tolerance.

What thermal extremes can the device withstand during operation?

It is rated to operate from −55 °C up to +175 °C across its specified thermal range.

How does the package influence board assembly and cooling?

The TO-263 surface-mount format permits soldered thermal contact to copper planes for heat spreading and automated pick-and-place mounting.

What channel conduction type and orientation does it use?

It employs an N-type channel configured for standard enhancement-mode switching in power circuits.