Infineon OptiMOS-T2 Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin TO-262
- RS-stocknr.:
- 218-3061
- Fabrikantnummer:
- IPI45N06S409AKSA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 76,65
(excl. BTW)
€ 92,75
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 450 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,533 | € 76,65 |
| 100 - 200 | € 1,242 | € 62,10 |
| 250 - 450 | € 1,15 | € 57,50 |
| 500 - 950 | € 1,073 | € 53,65 |
| 1000 + | € 0,997 | € 49,85 |
*prijsindicatie
- RS-stocknr.:
- 218-3061
- Fabrikantnummer:
- IPI45N06S409AKSA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-262 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 23.45mm | |
| Width | 4.4 mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-262 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 175°C | ||
Height 23.45mm | ||
Width 4.4 mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T2 series N-channel automotive MOSFET integrated with I2PAK (TO-262) type package.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
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