Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-262
- RS-stocknr.:
- 214-9065
- Fabrikantnummer:
- IPI80N06S407AKSA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 96,55
(excl. BTW)
€ 116,85
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 350 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,931 | € 96,55 |
| 100 - 200 | € 1,878 | € 93,90 |
| 250 - 450 | € 1,829 | € 91,45 |
| 500 - 950 | € 1,782 | € 89,10 |
| 1000 + | € 1,738 | € 86,90 |
*prijsindicatie
- RS-stocknr.:
- 214-9065
- Fabrikantnummer:
- IPI80N06S407AKSA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS-T2 | |
| Package Type | TO-262 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 79W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.4mm | |
| Height | 23.45mm | |
| Length | 10.2mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS-T2 | ||
Package Type TO-262 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 79W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.4mm | ||
Height 23.45mm | ||
Length 10.2mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
The product is AEC Q101 qualified
It has 175°C operating temperature
100% Avalanche tested
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