Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-262 IPI80N06S4L07AKSA2

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RS-stocknr.:
214-9068
Fabrikantnummer:
IPI80N06S4L07AKSA2
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS-T2

Package Type

TO-262

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

79W

Typical Gate Charge Qg @ Vgs

58nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

23.45mm

Length

10.2mm

Standards/Approvals

No

Width

4.4 mm

Automotive Standard

AEC-Q101

The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

The product is AEC Q101 qualified

It has 175°C operating temperature

100% Avalanche tested

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