Infineon StrongIRFET Type N-Channel MOSFET, 483 A, 100 V Enhancement, 3-Pin TO-247 IRF100P218XKMA1
- RS-stocknr.:
- 218-3093
- Fabrikantnummer:
- IRF100P218XKMA1
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 218-3093
- Fabrikantnummer:
- IRF100P218XKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 483A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | StrongIRFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.00128Ω | |
| Channel Mode | Enhancement | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 483A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series StrongIRFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.00128Ω | ||
Channel Mode Enhancement | ||
The Infineon 100 V N-Channel Power MOSFET. This MOSFET is Ideal for high switching frequency applications.
Very low RDS(on)
Excellent gate charge x RDS(on) (FOM)
Optimized Qrr
175°C operating temperature
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