Infineon HEXFET Type P-Channel MOSFET, 13 A, 150 V, 3-Pin TO-263 IRF6215STRLPBF
- RS-stocknr.:
- 218-3098
- Fabrikantnummer:
- IRF6215STRLPBF
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 218-3098
- Fabrikantnummer:
- IRF6215STRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 290mΩ | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Forward Voltage Vf | -1.6V | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 9.65mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 290mΩ | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Forward Voltage Vf -1.6V | ||
Length 10.67mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 9.65mm | ||
Automotive Standard No | ||
The Infineon IRF series single P-Channel power MOSFET. This MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications.
Fast switching
P-channel
175°C Operating Temperature
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