Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252 IRFR6215TRLPBF
- RS-stocknr.:
- 258-3986
- Fabrikantnummer:
- IRFR6215TRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,45
(excl. BTW)
€ 7,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.465 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,29 | € 6,45 |
| 50 - 120 | € 1,162 | € 5,81 |
| 125 - 245 | € 1,096 | € 5,48 |
| 250 - 495 | € 1,02 | € 5,10 |
| 500 + | € 0,942 | € 4,71 |
*prijsindicatie
- RS-stocknr.:
- 258-3986
- Fabrikantnummer:
- IRFR6215TRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -13A | |
| Maximum Drain Source Voltage Vds | -150V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 580mΩ | |
| Forward Voltage Vf | -1.6V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -13A | ||
Maximum Drain Source Voltage Vds -150V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 580mΩ | ||
Forward Voltage Vf -1.6V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared, or wave soldering techniques. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
increased ruggedness
Wide availability from distribution partners
Industry standard qualification level
Gerelateerde Links
- Infineon HEXFET P-Channel MOSFET 150 V DPAK IRFR6215TRLPBF
- Infineon HEXFET Silicon P-Channel MOSFET 150 V, 3-Pin DPAK AUIRFR6215TRL
- Infineon HEXFET N-Channel MOSFET 150 V DPAK IRFR6215TRPBF
- Infineon HEXFET P-Channel MOSFET 100 V, 3-Pin DPAK IRFR5410TRPBF
- Infineon HEXFET P-Channel MOSFET 100 V, 3-Pin DPAK IRFR5410TRLPBF
- Infineon HEXFET Silicon P-Channel MOSFET 100 V, 3-Pin DPAK AUIRFR5410TRL
- Infineon HEXFET P-Channel MOSFET 150 V, 3-Pin D2PAK IRF6215STRLPBF
- Infineon HEXFET P-Channel MOSFET 150 V, 3-Pin TO-220 AUIRF6215