Infineon HEXFET Type N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET IRF6775MTRPBF
- RS-stocknr.:
- 218-3102
- Fabrikantnummer:
- IRF6775MTRPBF
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 10 eenheden)*
€ 9,56
(excl. BTW)
€ 11,57
(incl. BTW)
Voeg 80 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 4.380 stuk(s) vanaf 16 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,956 | € 9,56 |
*prijsindicatie
- RS-stocknr.:
- 218-3102
- Fabrikantnummer:
- IRF6775MTRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 1.3V | |
| Width | 3.95 mm | |
| Height | 0.68mm | |
| Standards/Approvals | No | |
| Length | 4.85mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 1.3V | ||
Width 3.95 mm | ||
Height 0.68mm | ||
Standards/Approvals No | ||
Length 4.85mm | ||
Automotive Standard No | ||
The Infineon 150V Single N-channel HEXFET power MOSFET. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. The lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.
Latest MOSFET Silicon technology
Dual sided cooling compatible
Compatible with existing surface mount technologies
Lead-Free
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET 150 V, 2-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 150 V, 7-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 150 V, 15-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 150 V, 7-Pin DirectFET IRF6643TRPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V, 15-Pin DirectFET IRF7779L2TRPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 2-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin DirectFET AUIRF7675M2TR