Infineon HEXFET N-Channel MOSFET, 93 A, 20 V, 3-Pin TO-252 IRFR3711ZTRPBF
- RS-stocknr.:
- 218-3109
- Fabrikantnummer:
- IRFR3711ZTRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 20 eenheden)*
€ 16,28
(excl. BTW)
€ 19,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 februari 2027
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,814 | € 16,28 |
| 100 - 180 | € 0,774 | € 15,48 |
| 200 - 480 | € 0,741 | € 14,82 |
| 500 - 980 | € 0,709 | € 14,18 |
| 1000 + | € 0,66 | € 13,20 |
*prijsindicatie
- RS-stocknr.:
- 218-3109
- Fabrikantnummer:
- IRFR3711ZTRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 93A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | 10V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 2.39mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 93A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf 10V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 175°C | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 2.39mm | ||
Automotive Standard No | ||
The Infineon HEXFET series 20V Single N-Channel Power MOSFET. This device is ideal for low frequency applications requiring performance and ruggedness.
Ultra-Low Gate Impedance
Lead free
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