Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 4-Pin TO-247 IPZA60R060P7XKSA1

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 verpakking van 2 eenheden)*

€ 12,31

(excl. BTW)

€ 14,896

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 05 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
2 - 8€ 6,155€ 12,31
10 - 18€ 4,86€ 9,72
20 - 48€ 4,49€ 8,98
50 - 98€ 4,18€ 8,36
100 +€ 3,88€ 7,76

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
220-7466
Fabrikantnummer:
IPZA60R060P7XKSA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

151A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

67nC

Maximum Power Dissipation Pd

164W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

15.9mm

Standards/Approvals

No

Width

5.1 mm

Height

21.1mm

Automotive Standard

No

The Infineon 600V Cool MOS P7 super junction MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency

Ease-of-use in manufacturing environments by stopping ESD failures occurring

Integrated RG reduces MOSFET oscillation sensitivity

MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

Excellent ruggedness during hard commutation of the body diode seen in LLC topology

Suitable for a wide variety of end applications and output powers

Parts available suitable for consumer and industrial applications

Gerelateerde Links