Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 4-Pin TO-247 IPZA60R060P7XKSA1

RS-stocknr.:: 220-7466
Fabrikantnummer:: IPZA60R060P7XKSA1
Fabrikant:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 4-Pin TO-247 IPZA60R060P7XKSA1

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Subtotaal (1 verpakking van 2 eenheden)*

€ 15,29

(excl. BTW)

€ 18,50

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 27 januari 2027

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Aantal stuks	Per stuk	Per verpakking*
2 - 8	€ 7,645	€ 15,29
10 - 18	€ 6,04	€ 12,08
20 - 48	€ 5,58	€ 11,16
50 - 98	€ 5,19	€ 10,38
100 +	€ 4,82	€ 9,64

*prijsindicatie

RS-stocknr.:: 220-7466
Fabrikantnummer:: IPZA60R060P7XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	151A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS P7
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	164W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	67nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	15.9mm
	Height	21.1mm
	Width	5.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 151A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS P7
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 164W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 67nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 15.9mm
	Height 21.1mm
	Width 5.1mm
	Automotive Standard No

Datasheet - IPZA60R060P7XKSA1

The Infineon 600V Cool MOS P7 super junction MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency

Ease-of-use in manufacturing environments by stopping ESD failures occurring

Integrated RG reduces MOSFET oscillation sensitivity

MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

Excellent ruggedness during hard commutation of the body diode seen in LLC topology

Suitable for a wide variety of end applications and output powers

Parts available suitable for consumer and industrial applications

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 4-Pin TO-247 IPZA60R060P7XKSA1

GRATIS bezorging voor bestellingen van meer dan € 90,00

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