Infineon CoolMOS CSFD Type N-Channel MOSFET, 236 A, 650 V Enhancement, 3-Pin TO-247

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RS-stocknr.:
219-6020
Fabrikantnummer:
IPW60R037CSFDXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

236A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

CoolMOS CSFD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

37mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

136nC

Maximum Power Dissipation Pd

245W

Maximum Operating Temperature

150°C

Height

5.21mm

Standards/Approvals

No

Length

16.13mm

Automotive Standard

No

The Infineon IPW60R037CSFD CoolMOS superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behaviour it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

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