Infineon CoolMOS CSFD Type N-Channel MOSFET, 236 A, 650 V Enhancement, 3-Pin TO-247 IPW60R037CSFDXKSA1
- RS-stocknr.:
- 219-6021
- Fabrikantnummer:
- IPW60R037CSFDXKSA1
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 219-6021
- Fabrikantnummer:
- IPW60R037CSFDXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 236A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS CSFD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 136nC | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 236A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS CSFD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 136nC | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon IPW60R037CSFD CoolMOS superjunction MOSFET is an optimized device tailored to address the off-board EV-charging market segment. Thanks to low gate charge (Qg) and improved switching behaviour it offers highest efficiency in the targeted market. In addition to that it comes along with an integrated fast body diode and tremendously reduced reverse recovery charge (Qrr) leading to highest reliability in resonant topologies. Due to these features the IPW60R037CSFD meets the efficiency and reliability standards of the off-board EV-charging station market and furthermore supports high power density solutions.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Gerelateerde Links
- Infineon CoolMOS CSFD Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CSFD Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS CSFD Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R024CFD7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R170CFD7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R041P6FKSA1