Infineon HEXFET Type N-Channel MOSFET & Diode, 162 A, 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL
- RS-stocknr.:
- 220-7341
- Fabrikantnummer:
- AUIRF1404STRL
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 2 eenheden)*
€ 10,53
(excl. BTW)
€ 12,742
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 698 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 5,265 | € 10,53 |
*prijsindicatie
- RS-stocknr.:
- 220-7341
- Fabrikantnummer:
- AUIRF1404STRL
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 162A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 162A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon AUIRF1404STRL specifically designed for Automotive applications, this Stripe. it has planar design of HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced planar technology
Dynamic dV/dT rating
175°C operating temperature
Fast switching
Fully Avalanche Rated
Repetitive avalanche allowed up to Tjmax
Lead free, RoHS compliant
Automotive qualified
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