Infineon HEXFET N-Channel MOSFET, 162 A, 40 V TO-263 IRF1404STRLPBF
- RS-stocknr.:
- 257-9274
- Artikelnummer Distrelec:
- 304-40-515
- Fabrikantnummer:
- IRF1404STRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 6,14
(excl. BTW)
€ 7,42
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 722 stuk(s) vanaf 02 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,07 | € 6,14 |
| 20 - 48 | € 2,89 | € 5,78 |
| 50 - 98 | € 2,735 | € 5,47 |
| 100 - 198 | € 2,52 | € 5,04 |
| 200 + | € 2,34 | € 4,68 |
*prijsindicatie
- RS-stocknr.:
- 257-9274
- Artikelnummer Distrelec:
- 304-40-515
- Fabrikantnummer:
- IRF1404STRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 162A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 162A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a D2 Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Industry standard surface mount power package
High current carrying capability package (up to 195 A, die size dependent)
Capable of being wave soldered
Gerelateerde Links
- Infineon HEXFET N-Channel MOSFET 40 V TO-263
- Infineon HEXFET N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263
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- Infineon iPB N-Channel MOSFET 100 V P TO-263
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- Infineon HEXFET N-Channel MOSFET 75 V TO-263
- Infineon HEXFET N-Channel MOSFET 100 V TO-263
- Infineon HEXFET N-Channel MOSFET 200 V TO-263
