Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 78 A, 650 V Enhancement, 3-Pin TO-220 IPA60R120P7XKSA1
- RS-stocknr.:
- 220-7368
- Fabrikantnummer:
- IPA60R120P7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 17,98
(excl. BTW)
€ 21,755
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.365 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,596 | € 17,98 |
| 25 - 45 | € 3,238 | € 16,19 |
| 50 - 120 | € 3,02 | € 15,10 |
| 125 - 245 | € 2,806 | € 14,03 |
| 250 + | € 2,624 | € 13,12 |
*prijsindicatie
- RS-stocknr.:
- 220-7368
- Fabrikantnummer:
- IPA60R120P7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 78A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 78A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS P7 super junction MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency
Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
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