Infineon C7 GOLD Type N-Channel MOSFET & Diode, 45 A, 650 V Enhancement, 10-Pin HDSOP

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€ 2.512,60

(excl. BTW)

€ 3.039,60

(incl. BTW)

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  • Verzending vanaf 04 mei 2026
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RS-stocknr.:
220-7419
Fabrikantnummer:
IPDD60R150G7XTMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Package Type

HDSOP

Series

C7 GOLD

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

95W

Standards/Approvals

No

Length

6.6mm

Width

2.35 mm

Height

21.11mm

Automotive Standard

No

The Infineon Technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V Cool MOS G7 super junction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg

Innovative top-side cooling concept

Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance

TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free

Enabling highest energy efficiency

Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits

Reduced parasitic source inductance improves e efficiency and ease-of-use

Enables higher power density solutions

Exceeding the highest quality standards

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