Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON

Subtotaal (1 rol van 3000 eenheden)*

€ 5.382,00

(excl. BTW)

€ 6.513,00

(incl. BTW)

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3000 +€ 1,794€ 5.382,00

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RS-stocknr.:
220-7430
Fabrikantnummer:
IPL60R095CFD7AUMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

97A

Maximum Drain Source Voltage Vds

650V

Package Type

VSON

Series

CoolMOS

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

147W

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Height

1.1mm

Length

8.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

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