Infineon CoolMOS Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin VSON IPL60R185C7AUMA1
- RS-stocknr.:
- 222-4683
- Fabrikantnummer:
- IPL60R185C7AUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 19,19
(excl. BTW)
€ 23,22
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,838 | € 19,19 |
| 25 - 45 | € 3,338 | € 16,69 |
| 50 - 120 | € 3,108 | € 15,54 |
| 125 - 245 | € 2,914 | € 14,57 |
| 250 + | € 2,686 | € 13,43 |
*prijsindicatie
- RS-stocknr.:
- 222-4683
- Fabrikantnummer:
- IPL60R185C7AUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | VSON | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 185mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 77W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Width | 8.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type VSON | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 185mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 77W | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Width 8.1mm | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
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