Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 100 A, 650 V Enhancement, 5-Pin VSON IPL60R105P7AUMA1

RS-stocknr.:: 220-7433
Fabrikantnummer:: IPL60R105P7AUMA1
Fabrikant:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 100 A, 650 V Enhancement, 5-Pin VSON IPL60R105P7AUMA1

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Subtotaal (1 verpakking van 2 eenheden)*

€ 9,20

(excl. BTW)

€ 11,14

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Plus verzending 2.474 stuk(s) vanaf 26 augustus 2026

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Aantal stuks	Per stuk	Per verpakking*
2 - 8	€ 4,60	€ 9,20
10 - 18	€ 4,14	€ 8,28
20 - 48	€ 3,86	€ 7,72
50 - 98	€ 3,59	€ 7,18
100 +	€ 3,365	€ 6,73

*prijsindicatie

RS-stocknr.:: 220-7433
Fabrikantnummer:: IPL60R105P7AUMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS P7
	Package Type	VSON
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	105mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	45nC
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	137W
	Maximum Operating Temperature	150°C
	Length	8.1mm
	Width	8.1mm
	Standards/Approvals	No
	Height	1.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS P7
	Package Type VSON
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 105mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 45nC
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 137W
	Maximum Operating Temperature 150°C
	Length 8.1mm
	Width 8.1mm
	Standards/Approvals No
	Height 1.1mm
	Automotive Standard No

Datasheet - IPL60R105P7AUMA1

The Infineon 600V Cool MOS P7 super junction (SJ) MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency

Ease-of-use in manufacturing environments by stopping ESD failures occurring

Integrated RG reduces MOSFET oscillation sensitivity

MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

Excellent ruggedness during hard commutation of the body diode seen in LLC topology

Suitable for a wide variety of end applications and output powers

Parts available suitable for consumer and industrial applications

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 100 A, 650 V Enhancement, 5-Pin VSON IPL60R105P7AUMA1

GRATIS bezorging voor bestellingen van meer dan € 90,00

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