Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 30 A, 650 V Enhancement, 5-Pin ThinPAK IPL60R360P6SATMA1

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Verpakkingsopties
RS-stocknr.:
220-7435
Fabrikantnummer:
IPL60R360P6SATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Package Type

ThinPAK

Series

CoolMOS P6

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

89.3W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Width

6.1 mm

Standards/Approvals

No

Height

1.1mm

Length

5.1mm

Automotive Standard

No

The Infineon new Cool MOS Thin PAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. This significantly smaller package size in combination with its benchmark low parasitic inductances can be used as a new and effective way to decrease system solution size in power- density driven designs. The Thin PAK 5x6 package is characterized by a very low source inductance 1.6nH, as well as a similar thermal performance as DPAK. The package hence enables faster and thus more efficient switching of power MOSFETs and is easier to handle in terms of switching behaviour and EMI.

Extremely low losses due to very low FOMRdson*Qg and Eoss

Very high commutation ruggedness

Easy to use/drive

Pb-freeplating, Halogen free mold compound

Qualified for industrial grade applications according to JEDEC

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