Infineon StrongIRFET Type N-Channel MOSFET & Diode, 363 A, 60 V Enhancement, 7-Pin TO-263
- RS-stocknr.:
- 220-7471
- Fabrikantnummer:
- IRF60SC241ARMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 800 eenheden)*
€ 1.612,00
(excl. BTW)
€ 1.950,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 800 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 800 + | € 2,015 | € 1.612,00 |
*prijsindicatie
- RS-stocknr.:
- 220-7471
- Fabrikantnummer:
- IRF60SC241ARMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 363A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | StrongIRFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.95mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.4W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 311nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.4mm | |
| Width | 9.45 mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 363A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series StrongIRFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.95mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.4W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 311nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.4mm | ||
Width 9.45 mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Automotive Standard No | ||
The Infineon latest 60 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.
Low RDS(on)
High current capability
Industry standard package
Flexible pinout
Optimized for 10 V gate drive
Reduction in conduction losses
Increased power density
Drop in replacement to existing devices
Offers design flexibility
Provides immunity to false turn-on in noisy environments
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